14V N-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C073S3 Issued Date : 2016.07.04 Revised Date : Page No. : 1/9
14V N-Channel Enha...
Description
CYStech Electronics Corp.
Spec. No. : C073S3 Issued Date : 2016.07.04 Revised Date : Page No. : 1/9
14V N-Channel Enhancement Mode MOSFET
MTA020N01S3
BVDSS ID@VGS=4.5V, TA=25°C
RDSON@VGS=4.5V, ID=2.3A
RDSON@VGS=2.5V, ID=2.3A
14V 2.3A
37mΩ(typ) 46mΩ(typ)
Features
Simple drive requirement Small package outline Pb-free lead plating and halogen-free package
Symbol
MTA020N01S3
Outline
SOT-323 D
G:Gate S:Source D:Drain
S G
Ordering Information
Device MTA020N01S3-0-T1-G
Package
Shipping
SOT-323 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTA020N01S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C073S3 Issued Date : 2016.07.04 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current
(Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
(Note 3)
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD Tj ; Tstg
Limits 14 ±8 2.3 1.8 10 0.34
-55~+150
Unit V
A
W °C
Thermal Performance
Parameter
Symbol
Limit
Thermal Resistance, Junction-to-Ambient, max
(Note3)
RθJA
367
Thermal Resistance...
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