74HC08D

CMOS Digital Integrated Circuits Silicon Monolithic 74HC08D 74HC08D 1. Functional Description Quad 2-Input AND Gate 2. General The 74HC08D is a high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 2-stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 6 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25  (3) Balanced propagation delays: tPLH ≈ tPHL (4) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V 4. Packaging SOIC14 ©2016 Toshiba Corporation 1 Start of commercial production 2016-05 2016-08-04 Rev.4.0 5. Pin Assignment 6. Marking 7. IEC Logic Symbol 74HC08D ©2016 Toshiba Corporation 2 2016-08-04 Rev.4.0 8. Truth Table 74HC08D ABY LLL LHL HL L HHH 9. Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 7.0 V Input voltage VIN -0.5 to VCC + 0.5 V Output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA Output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD (Note 1) 500 mW Storage temperature Tstg -65 to 150  Note: Exceeding any of the abs...