FI4019HG

PD - 96274 IRFI4019HG-117P DIGITAL AUDIO MOSFET Features Ÿ Integrated Half-Bridge Package Ÿ Reduces the Part Count by Half Ÿ Facilitates Better PCB Layout Ÿ Key Parameters Optimized for Class-D Audio Amplifier Applications Ÿ Low RDS(ON) for Improved Efficiency Ÿ Low Qg and Qsw for Better THD and Improved Efficiency Ÿ Low Qrr for Better THD and Lower EMI Ÿ Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Ÿ Lead-Free Package Ÿ Halogen-Free hKey Parameters VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 150 80 13 4.1 2.5 150 V m: nC nC Ω °C D1 G1 S1/D2 G2 S2 TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. hAbsolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM EAS PD @TC = 25°C PD @TC = 100°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Cu...