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MTN4N65CI3 Dataheets PDF



Part Number MTN4N65CI3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTN4N65CI3 DatasheetMTN4N65CI3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N65CI3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C Features RDS(ON)@VGS=10V, ID=2A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free Lead Plating and Halogen-free Package 650V 4A 2.4A 1.8Ω(typ) Applications • Open Framed Power Supply • Adapter • STB Symbol MTN4N65CI3 Outline TO-25.

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CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N65CI3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C Features RDS(ON)@VGS=10V, ID=2A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free Lead Plating and Halogen-free Package 650V 4A 2.4A 1.8Ω(typ) Applications • Open Framed Power Supply • Adapter • STB Symbol MTN4N65CI3 Outline TO-251 G:Gate D:Drain S:Source G DS Ordering Information Device MTN4N65CI3-0-UA-G Package TO-251 (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTN4N65CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature *100% UIS testing in condition of VDD=50V, L=8mH, VG=10V, IL=2A, Rated VDS=650V Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=2A, VDD=50V, L=8mH, VG=10V, starting TJ=+25℃. Symbol VDS VGS ID IDM IAS EAS EAR TL PD Tj, Tstg Limits 650 ±30 4* 2.4* 16* 2 16 4.8 300 48 0.38 -55~+150 Unit V A mJ °C W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 1) Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 2.6 50 110 1. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. 2. When the device is mounted on the minimum pad size recommended (PCB mount) with TA=25°C. Unit °C/W MTN4N65CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 3/10 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS 650 2.0 - *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss - Source-Drain Diode *IS - *ISM - *VSD - *trr - *Qrr - - - V VGS=0V, ID=250μA, Tj=25℃ 0.6 - V/°C Reference to 25°C, ID=250μA - 4.0 V VDS = VGS, ID=250μA 5 - S VDS =15V, ID=2A - ±100 nA VGS=±30V - 1 10 μA VDS =650V, VGS =0V VDS =520V, VGS =0V, Tj=125°C 1.8 2.6 Ω VGS =10V, ID=2A 16 3.1 5.5 11 8.6 35.4 31.6 621 61 39 - nC ID=4A, VDD=520V, VGS=10V ns VDD=325V, ID=4A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz -4 - 16 - 1.5 343 1.59 - A V IS=2A, VGS=0V ns μC VGS=0V, IF=4A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN4N65CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 4/10 ID, Drain Current(A) Typical Characteristics Typical Output Characteristics 10 10V,9V,8V,7V,6V 8 6 VGS=5V 4 2 VGS=4.5V VGS=4V 0 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current 5 VGS=10V 4 BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.2 1.1 1 0.9 0.8 0.7 ID=250μA, VGS=0V 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) Drain Current vs Gate-Source Voltage 10 TC=25°C 8 VDS=30V ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) 36 2 4 VDS=10V 12 RDS(on), Static Drain-Source On-State Resistance(Ω) 0 0.001 0.01 0.1 ID, Drain Current(A) 1 10 Static Drain-Source On-State Resistance vs Gate-Source Voltage 8 7 Ta=25°C 6 5 4 3 2 ID=2A 1 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) IF, Forward Current(A) 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) Forward Drain Current vs Source-Drain Voltage 10 VGS=0V 1 Tj=150°C 0.1 Tj=25°C 0.01 0.001 0 0.2 0.4 0.6 0.8 VSD, Source Drain Voltage(V) 1 1.2 MTN4N65CI3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics(Cont.) Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 5/10 Capacitance-(pF) ID, Drain Current(A) Capacitance vs Reverse Voltage 1000 Ciss Coss 100 f=1MHz Crss 10 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 Maximum Safe Operating Area 100 10 RDS(ON) Limited 1 10μs 100μs 1ms 10ms 100ms 0.1 TC=25°C, Tj=150°C, VGS=10.


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