Document
CYStech Electronics Corp.
Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN4N65CI3
BVDSS ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
Features
RDS(ON)@VGS=10V, ID=2A
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free Lead Plating and Halogen-free Package
650V 4A
2.4A 1.8Ω(typ)
Applications
• Open Framed Power Supply • Adapter • STB
Symbol
MTN4N65CI3
Outline
TO-251
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTN4N65CI3-0-UA-G
Package
TO-251 (RoHS compliant and halogen-free package)
Shipping 80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products
Product name
MTN4N65CI3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature *100% UIS testing in condition of VDD=50V, L=8mH, VG=10V, IL=2A, Rated VDS=650V
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=2A, VDD=50V, L=8mH, VG=10V, starting TJ=+25℃.
Symbol
VDS VGS
ID
IDM IAS EAS EAR
TL PD
Tj, Tstg
Limits
650 ±30 4* 2.4* 16*
2 16 4.8
300
48 0.38 -55~+150
Unit
V
A
mJ °C W W/°C °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 1) Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol RθJC
RθJA
Value 2.6 50 110
1. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C.
2. When the device is mounted on the minimum pad size recommended (PCB mount) with TA=25°C.
Unit °C/W
MTN4N65CI3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 3/10
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static BVDSS
∆BVDSS/∆Tj VGS(th) *GFS IGSS
IDSS
650
2.0 -
*RDS(ON)
-
Dynamic *Qg *Qgs *Qgd *td(ON) *tr
*td(OFF) *tf Ciss Coss Crss
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
- - V VGS=0V, ID=250μA, Tj=25℃
0.6 - V/°C Reference to 25°C, ID=250μA
- 4.0 V VDS = VGS, ID=250μA
5 - S VDS =15V, ID=2A
-
±100
nA VGS=±30V
-
1 10
μA
VDS =650V, VGS =0V VDS =520V, VGS =0V, Tj=125°C
1.8 2.6 Ω VGS =10V, ID=2A
16 3.1 5.5 11 8.6 35.4 31.6 621 61 39 -
nC ID=4A, VDD=520V, VGS=10V
ns
VDD=325V, ID=4A, VGS=10V, RG=25Ω
pF VGS=0V, VDS=25V, f=1MHz
-4 - 16 - 1.5 343 1.59 -
A
V IS=2A, VGS=0V
ns μC
VGS=0V, IF=4A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN4N65CI3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 4/10
ID, Drain Current(A)
Typical Characteristics
Typical Output Characteristics
10 10V,9V,8V,7V,6V
8
6 VGS=5V
4
2 VGS=4.5V
VGS=4V 0
0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current 5
VGS=10V 4
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.2
1.1
1
0.9
0.8
0.7 ID=250μA, VGS=0V
0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C)
Drain Current vs Gate-Source Voltage 10
TC=25°C 8
VDS=30V
ID, Drain Current(A)
RDS(on), Static Drain-Source On-State Resistance(Ω)
36
2
4 VDS=10V
12
RDS(on), Static Drain-Source On-State Resistance(Ω)
0 0.001
0.01 0.1 ID, Drain Current(A)
1
10
Static Drain-Source On-State Resistance vs Gate-Source Voltage
8 7 Ta=25°C
6
5
4
3
2 ID=2A 1
0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
IF, Forward Current(A)
0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
Forward Drain Current vs Source-Drain Voltage
10
VGS=0V 1
Tj=150°C 0.1
Tj=25°C
0.01
0.001 0
0.2 0.4 0.6 0.8 VSD, Source Drain Voltage(V)
1
1.2
MTN4N65CI3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 5/10
Capacitance-(pF)
ID, Drain Current(A)
Capacitance vs Reverse Voltage 1000
Ciss
Coss 100
f=1MHz
Crss
10
0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
10 RDS(ON) Limited
1
10μs
100μs 1ms 10ms 100ms
0.1 TC=25°C, Tj=150°C, VGS=10.