N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C894H8 Issued Date : 2016.07.26 Revised Date : Page No. : 1/10
N-Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C894H8 Issued Date : 2016.07.26 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTED6N25H8 BVDSS ID @VGS=10V, TC=25°C
ID @VGS=10V, TA=25°C
RDSON(TYP) VGS=10V, ID=5A
250V 4.6A 1.2A 426mΩ
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and Halogen-free package
Symbol
MTED6N25H8
G:Gate D:Drain S:Source
Outline
Pin 1
S S S G
DFN5×6
D D D D
G S
S
S
D D D D
Pin 1
Ordering Information
Device MTED6N25H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTED6N25H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C894H8 Issued Date : 2016.07.26 Revised Date : Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V (Note 1)
Continuous Drain Current @ TC=100°C, VGS=10V (Note 1)
Continuous Drain Current @ TA=25°C, VGS=10V (Note 2)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=10mH, ID=4.6A, VDD=50V (Note 5)
Repetitive Avalanche Energy @ L=0.05mH
(Note 3)
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