MTEA6C15J4

CYStech Electronics Corp. Spec. No. : C938J4 Issued Date : 2013.12.04 Revised Date : 2013.12.30 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTEA6C15J4 BVDSS ID @VGS=10V(-10V) Features Low gate charge Simple drive requirement ESD protected Pb-free lead plating and halogen-free package RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=6V(-6V) N-CH 150V 9.3A 163mΩ 177mΩ P-CH -150V -7.1A 283mΩ 308Ω Equivalent Circuit MTEA6C15J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(-10V) Continuous Drain Current @ TC=100°C, VGS=10V(-10V) Continuous Drain Current @ TA=25°C, VGS=10V(-10V) Continuous Drain Current @ TA=70°C, VGS=10V(-10V) Pulsed Drain Current *1 Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% (Note1) (Note1) (Note2) (Note2) (Note3) (Note1) (Note1) (Note2) (Note2) Symbol Limits N-channel P-channel VDS 150 -150 VGS ±20 ±20 ID 9.3 6.6 -7.1 -5.0 IDSM 2 1.7 -1.5 -1.3 IDM 20 -20 PD 37.5 18.7 PDSM 2.4 1.7 Tj, Tstg -55~+175 Unit V A W °C MTEA6C15J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C938J4 Issued Date : 2013.12.04 Revised Date : 2013.12.30 ...