MTE50N10BFP

CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE50N10BFP BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=15A Features RDS(ON)@VGS=7V, ID=10A Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) Symbol MTE50N10BFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE50N10BFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE50N10BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.14mH, ID=24 Amps, VDD=50V (Note 2) Repetitiv...