MTE030N15RQ8

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE030N15RQ8 Spec. No. : C838Q8 Issued Date : 2016.06.29 Revised Date : Page No. : 1/9 Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=6A 150V 5.6A 29.5 mΩ(typ) Symbol MTE030N15RQ8 Outline DD SOP-8 DD G：Gate D：Drain S：Source Pin 1 G SSS Ordering Information Device MTE030N15RQ8-0-T3-G Package Shipping SOP-8 (RoHS compliant & Halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE030N15RQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C838Q8 Issued Date : 2016.06.29 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=10mH, ID=6A, VDD=50V Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation TA=25 °C TA=70 °C VDS VGS ID IDM IAS EAS EAR PD Operating Junction and Storage Temperature Tj, Tstg Note : *1. Pulse width limited by maximum junction temper...