N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C928E3 Issued Date : 2013.11.04 Revised Date : 2013.11.12 Page No. : 1/8
N-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C928E3 Issued Date : 2013.11.04 Revised Date : 2013.11.12 Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE05N10E3 BVDSS ID
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V 140A 5.9mΩ 6.2mΩ
Features
Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package
Symbol
MTE05N10E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTE05N10E3-0-UB-S
Package
TO-220 (Pb-free lead plating package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
MTE05N10E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C928E3 Issued Date : 2013.11.04 Revised Date : 2013.11.12 Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C(silicon limit)
Continuous Drain Current @ TC=100°C(silicon limit)
Continuous Drain Current @ TC=25°C(package limit) (Note 1)
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=40A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C TC=100°C
Power Di...
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