P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C975E3 Issued Date : 2016.05.26 Revised Date : Page No. : 1/8
P-Channel Enhancem...
Description
CYStech Electronics Corp.
Spec. No. : C975E3 Issued Date : 2016.05.26 Revised Date : Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTE050P10E3
BVDSS
ID @ VGS=-10V, TC=25°C
ID @ VGS=-10V, TA=25°C
RDSON(TYP) @ VGS=-10V, ID=-20A
Features
Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package
-100V -44A -4.6A 40mΩ
Symbol
MTE050P10E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTE050P10E3-0-UB-X
Package
Shipping
TO-220 (Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
MTE050P10E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C975E3 Issued Date : 2016.05.26 Revised Date : Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Pulsed Drain Current
Continuous Drain Current @ TA=25°C , VGS=10V
Continuous Drain Current @ TA=70°C , VGS=10V
Avalanche Current
Avalanche Energy @ L=1mH, ID=-21A, VDD=-25V
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C TC=100°C
Power Dissipation
TA=25°C TA=70°C
Operating Junction and Stor...
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