50N06

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max SMDversion ID 60 V 15 mΩ 50 A Type 50N06 50N06 2 Package Marking 1 3 TO-251 50N06 1 23 TO-252 50N06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D TC =25 °C1) Pulsed drain current I D,pulse T C=25 °C2) Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=48 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 160A 2) See figure 3 1 Value 50 400 810 6 ±20 300 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 0.5 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250uA ...