TF2319

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2319 P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −40 rDS(on) (W) 0.082 @ VGS = −10 V 0.130 @ VGS = −4.5 V ID (A)b −3.0 −2.4 FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switch (SOT-23) G1 S2 3D Top View TF2319 (C91T )* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage VDS −40 VGS "20 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25_C ID IDM IS −3.0 −1.0 −2.3 −12 −0.62 Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C PD TJ, Tstg 1.25 0.75 −55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2319 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Test Conditions VGS = 0 V, ID = −250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resista...