TF2314

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2314 N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V ID (A) 4.9 4.4 3.9 (SOT-23) G1 S2 3D Top View TF2314 (AEXTF ) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS 20 "12 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a TA= 25_C L = 0.1 mH ID IDM IAS EAS IS 4.9 3.77 15 15 11.25 1.0 Power Dissipationa TA= 25_C PD 1.25 0.75 Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 Unit V A mJ A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2314 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) Drain-Source On-Resistancea rDS(on) Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Dra...