TF2312

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2312 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.031 @ VGS = 4.5 V 0.037 @ VGS = 2.5 V 0.047 @ VGS = 1.8 V ID (A) 5.0 4.6 4.1 Qg (Typ) 7.5 (SOT-23) G1 S2 3D Top View Ordering Information: TF2312 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS 20 "8 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a TA= 25_C L = 0.1 mH ID IDM IAS EAS IS 5.0 3.9 15 13 8.45 1.0 0.63 Power Dissipationa TA= 25_C PD 1.25 0.75 Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 80 120 50 Maximum 100 166 60 Unit V A mJ A W _C Unit _C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2312 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb V(BR)DSS VGS(th) IGSS IDSS ID(on) ...