TF2307

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2307 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.055 @ VGS = –10 V 0.075 @ VGS = –4.5 V ID (A) –4.1 –3.0 (SOT-23) G1 S2 3D Top View TF2307 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS –30 VGS "20 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA= 25_C ID IDM IS –4.1 –12 –1.25 Power Dissipationa, b TA= 25_C PD 1.25 Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface mounted on FR4 board. b. t v 5 sec. t v 5 sec Steady State Symbol RthJA Typical 130 Maximum 100 Unit _C/W 2-1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2307 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Test Conditions VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingb Turn-On Time Turn-Off Time IDSS ID(on) rDS(on) gfs VSD Qg...