TF2303

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2303 P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.240 @ VGS = –10 V –30 0.460 @ VGS = –4.5 V ID (A)b –1.4 –1.0 (SOT-23) G1 S2 3D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS –30 V VGS "20 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25_C ID IDM IS –1.4 –1.3 –0.75 –10 –0.6 A Power Dissipationb TA= 25_C PD 0.9 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. Symbol RthJA Typical 115 140 Maximum 140 175 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2303 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingc Turn-On Time Turn-Off Time Symbol Test Conditions V(BR...