29F2G16

Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD Features Open NAND Flash Interface (ONFI) 1.0-compliant Single-level cell (SLC) technology Organization – Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks READ performance – Random READ: 25µs – Sequential READ: 25ns (3.3V) – Sequential READ: 35ns (1.8V) WRITE performance – PROGRAM PAGE: 220µs (TYP, 3.3V) – PROGRAM PAGE: 300µs (TYP, 1.8V) – BLOCK ERASE: 500µs (TYP) Data retention: 10 years Endurance: 100,000 PROGRAM/ERASE cycles First block (block address 00h) guaranteed to be valid with ECC when shipped from factory1 Industry-standard basic NAND Flash command set Advanced command set: – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – One-time programmable (OTP) commands – BLOCK LOCK (1.8V only) – PROGRAMMABLE DRIVE STRENGTH – READ UNIQUE ID Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion WP# signal: write protect entire device RESET required as first command after power-up INTERNAL DATA MOVE operations supported Alternate method of device initialization (Nand_Init) after power up4 (Contact Factory) Figure 1: 63-Ball VFB...