SSS7N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 7.0Amps ，600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually usually used at high speed switching applications in power supplies .PWM motor controls, high efficient .DC to DC converters and bridge circuits ■ FEATURES ● RDS(ON)=1.2Ω@VGS =10V ● Ultra Low gate charge(tupical 29nC) ● Low reverse transfer capacitance(Crss=typical6.0pF) ● Fast switching capability ● Avalanche energy tested ● Improved dv/dt capability,high ruggedness ■ SYMBOL ■ ORDERING INF ORMATION Order Number Normal Lead Free Plating 7N60-TA3-T 7N60L-TA3-T 2N60-TF3-T 2N60L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source Package TO-220 TO-220F Pin Assignment 12 3 GD S GD S Packing Tube Tube 2N60L-TA3-T (1)T:Tube,R:Tape Reel （1）Packing Type （2）Package Type （3）Lead Plating (2)TA3:TO220,TF3:TO-220F (3)L:Lead Free Plating Blank：Pb/Sn ■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless otherwise specified) PARAMETER SYMBOL PATINGS Drain-Source Voltage Gate-Source Voltage Avalanche Current(Note 2) Drain Currenet Continuous Tc=25℃ VDSS VGSS IAP ID 600 ±30 7.4 7.4 Drain Current Pulsed(Note 2) Avalanche Energy Peak Diode Recovery dv/dt(Note 4) Repetitive(Note 2) Single Pulse(Note 3) IDP EAR EAS dv/dt 29.6 14.2 530 4.5 ...