SDT2P02

Elektronische Bauelemente SDT2P02 -2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation. DFN2x2-6L-J FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATIONS Battery-powered instruments Portable computing Mobile phones GPS units and media players PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Typ. Max. 2.00 BSC. 2.00 BSC. 0.675 0.75 0.80 0.30 Typ. 0.75 0.86 1.1 0.65BSC REF. G H J K L P Millimeter Min. Typ. Max. 0.30 BSC 0.20 BSC 0 -- 0.06 0.15 0.20 0.25 0.20 0.30 0.38 0.52 0.65 0.72 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current@ VGS= -4.5V 1 Pulsed Drain Current 2 Power Dissipation@ TA=25°C 1 TA=25°C TA=70°C ID IDM PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 t≦5 sec Steady State RθJA Rating -20 ±8 -2.2 -1.7 -8.8 1.5 -55~150 83 125 Unit V V A A W °C °C / W http://www.SeCoSGmbH.com/ 12-Aug-2017 Rev. D Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente S...