1481

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 1481 NCE P-Channel Enhancement Mode Power MOSFET Description The 1481 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -5.5A RDS(ON) < 38mΩ @ VGS=-2.5V RDS(ON) < 26mΩ @ VGS=-4.5V D G S Schematic diagram ● Advanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge Application ●PWM applications ●Load switch ●Battery charge in cellular handset Pin assignment DFN2X2-6L bottom view Package marking and ordering information Device Marking Device Device Package 1481 1481 DFN2X2-6L Reel Size - Tape Width - Quantity - Absolute maximum ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -12 ±8 -5.5 -65 2.5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Thermal Resistance,Junction-to-Case (Note 2) RθJA RθJC 50 ℃/W 6.9 ℃/W Electrical characteristics (TA=25℃unless otherwise noted) Page 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 1481 Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Vol...