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MMBTH10LT1

Part Number	MMBTH10LT1
Manufacturer	Tuofeng Semiconductor
Description	NPN Transistor
Published	Aug 25, 2016
Detailed Description	Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTH10LT1 TRANSISTOR (NPN) F...
Datasheet	MMBTH10LT1 PDF File

Overview

Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SOT-23 Plastic-Encapsulate Transistors MMBTH10LT1 TRANSISTOR (NPN) FEATURES SOT-23 1.
BASE 2.
EMITTER 3.
COLLECTOR Power dissipation PCM: 0.
225 W (Tamb=25℃) Collector current ICM: 0.
05 Collector-base voltage A V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2.
9 1.
9 0.
95 0.
95 1.
0 2.
4 1.
3 Unit: mm 0.
4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test condi...

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