TIGER ELECTRONIC CO.,LTD
MMBT5551LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5551LT1 is designed for gener...
TIGER ELECTRONIC CO.,LTD
MMBT5551LT1
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature..................................................................................................-55+150°C Junction Temperature............... ............................................................ ..........+150°C Maximum
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................250 mW
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage. .......................................................................................180 V VCEO Collector to Emitter Voltage. ....................................................................................160 V VEBO Emitter to Base Voltage ...............................................................................................6 V IC Collector Current ........................................................................ .................................600mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3
fT Cob
Min. 180 160
6 80 80 30 100 -
Typ. -
Max. 50 50
0.15 0.2 1 1
250
300
6
Unit V V V nA nA V V V V
MHz pF
Test Conditions IC=100uA IC=1.0mA IE=10uA VCB=120V VEB=4V IC=10mA, IB=1.0mA IC=50mA, IB=...