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MMBT5401LT1

Part Number	MMBT5401LT1
Manufacturer	TGS
Description	PNP Transistor
Published	Aug 25, 2016
Detailed Description	TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for gener...
Datasheet	MMBT5401LT1 PDF File

Overview

TIGER ELECTRONIC CO.
,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
Features • High Collector-Emitter Breakdown Voltage.
BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1.
Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .
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-55~+150 °C Junction Temperature +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .
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