MMBT3906LT1

TIGER ELECTRONIC CO.,LTD MMBT3906LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT3906LT1 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature............................................................................................... -55~+150°C Junction Temperature......................................................................................................+150°C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 40 V VCEO Collector to Emitter Voltage ...................................................................................... 40 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current ........................................................................................................ 200mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 fT Cob Min. 40 40 5 0.65 60 80 100 60 30 250 - Typ. 0.2 0.84 - Max. 50 0.25 0.4 0.85 0.95 300 4.5 Unit V V V nA V V V V MHz pF Test Conditions IC=10uA IC=1mA IC=10uA VCE=30V, VBE=3V IC=10mA, IB=1m...