S9014LT1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN FEATURES High total power dissipation.(pc=0.2w) Complementary to S9015LT1 MARKING: L6 J6 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation TJ, Tstg Junction and Storage Temperature ELECTRICAL CHARACTERISTICS Tamb=25 Value 50 45 5 0.1 0.2 -55-150 unless otherwise specified Parameter Symbol Test conditions MIN TYP Units V V V A W MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100 A IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 A Collector cut-off current ICEO VCE=35V , IB=0 0.1 A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 A DC current gain hFE VCE=5V, IC= 1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage Transition frequency CLASSIFICATION OF hFE(1) Rank Range VBE(sat) fT IC=100 mA, IB= 5mA VCE=5V, IC= 10mA f=30MHz C 200-400 1 150 D 400-1000 V MHz Typical Characteristics S9014LT1 ...