S9012LT1

PNP General Purpose Transistors P b Lead(Pb)-Free V CEO S9012LT1 Value -25 -40 -5 -500 3 1 2 SOT-23 S9012LT1=2T1 -0.1 -100 -100 E=-20Vdc,IE= 0 ) -40 -5.0 300 2.4 417 -25 -40 -5.0 O -0.1 -0.1 -0.1 u u u WEITRON http://www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max ON CHARACTERISTICS DC Current Gain (IC=-50 mAdc, VCE=-1.0 Vdc) (IC=-500 mAdc, VCE=-1.0 Vdc) Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Base-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Base-Emitter Voltage ( IE=-100mA) hFE (1) hFE (2) VCE(sat) VBE(sat) VEBF 120 40 - - - 350 -0.6 -1.2 -1.4 Unit Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=-20 mAdc, VCE=-6 Vdc, f=30MHz) fT 150 - MHz - CLASSIFICATION OF hFE Rank L Range 120-200 H 200-350 WEITRON http://www.weitron.com.tw S9012LT1 IC , CO LLECTOR CURRENT(mA) -50 IB=-300uA IB=-250uA -40 IB=-200uA -30 IB=-150uA -20 IB=-100uA IB=-50uA -10 0 0 -10 -20 -30 -40 -50 VCE , COLLECTOR-EMITTER VOLTAGE (VoLTS) Figure 1. St atic Characteristic -1000 V BE(sat) -100 VCE (sat) -10 10 IC=10I B 100 1000 IC , COLLECTOR CURRENT (mA) Fig ure 3. Base-Emitter Saturation Voltage Co llector-Emitter Saturation Vo ltage VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA) hFE, DC CURRENT GAIN fT , CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 1000 100 VCE = -1V 10 -10 -100 -1000 IC , CO LLECTOR CURRENT (mA) Figure 2. DC c urre...