SS8550LT1

SS8550LT1 PNP Epitaxial Silicon Transistor 1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Collector-Emitter Voltage: VCEO= -25V Collector Dissipation: PC=625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG -40 -25 -6 -1500 625 150 -55~+150 V V V mA mW oC oC SOT-23 Tolerance : 0.1mm Dimensions (Unit : mm) 1. Emitter 2. Base 3. Collector Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBEF fT IC= -100µA, IE= 0 IC= -0.1mA, IB= 0 IE= -100µA, IC= 0 VCB= -40V, IE= 0 VCB= -20V, IB= 0 VEB= -5V, IC= 0mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA IC= -800mA, IB= -80mA IC= -800mA, IB= -80mA IE= -1500mA VCE= -10V, IC= -50mA f= 30MHz Min -40 -25 -6 120 40 100 Max -0.1 -0.1 -0.1 350 -0.5 -1.2 -1.6 Unit V V V µA µA µA V V V MHz hFE(1) CLASSIFICATION Classification L hFE(1) 120-200 Device Marking SS8550LT1=Y2 H 200-350 Elite Enterprises (H.K.) Co., Ltd....