Document
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
S8550LT1 TRANSISTOR (PNP)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
1. 0
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: -0.5 Collector-base voltage
A
V(BR)CBO:
-40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat)
Test conditions
Ic= -100µA, IE=0
Ic=-1mA, IB=0
IE= -100µA, IC=0
VCB= -40V, IE=0 VCE= -20V, IB=0 VEB= -3V, IC=0 VCE= -1V, IC= -50mA VCE= -1V, IC= -500mA IC=-500 mA, IB= -50mA IC=-500 mA, IB= -50mA
MIN MAX UNIT -40 V -25 V -5 V
-0.1 µA -0.1 µA -0.1 µA
120 350 50
-0.6 V -1.2 V
Transition frequency
fT
VCE= -6V, IC= -20mA
f=30MHz
150
CLASSIFICATION OF hFE(1) Rank Range
L 120-200
H 200-350
MHz
DEVICE MARKING
S8550LT1=2TY
Typical Characteristics
S8550LT1
A,Apr,2011
.