D669

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2SD669 2SD669A Open emitter VCEO Collector-emitter voltage 2SD669 2SD669A Open base VEBO Emitter-base voltage Open collector IC Collector current (DC) ICM Collector current-peak PD Total power dissipation Tj Junction temperature Ta=25 TC=25 Tstg Storage temperature VALUE 180 180 120 160 5 1.5 3 1 20 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage 2SD669 2SD669A IC=10mA; RBE=B V(BR)CBO Collector-base breakdown voltage 2SD669 2SD669A IC=1m A ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA VBE Base-emitter on voltage IC=150mA ; VCE=5V ICBO Collector cut-off current VCB=160V; IE=0 hFE-1 DC current gain 2SD669 2SD669A IC=150mA ; VCE=5V hFE-2 fT COB DC current gain Transition frequency Collector output capacitance IC=0.5A ; V...