CEPF630/CEBF630 CEFF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEPF630 CEBF630 CEFF630
VDSS...
CEPF630/CEBF630 CEFF630
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEPF630 CEBF630 CEFF630
VDSS 200V 200V
200V
RDS(ON) 0.35Ω 0.35Ω
0.35Ω
ID 10A 10A 10A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
200
±20
10 40 75 0.6
10 d 40 d 33 0.27
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.5 62.5
3.7 65
Units
V V A A W W/ C C
Units C/W C/W
D...