CEP6031LS2/CEB6031LS2
March 1998
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 60A , R...
CEP6031LS2/CEB6031LS2
March 1998
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
30V , 60A , RDS(ON)=12m Ω @VGS=10V.
RDS(ON)=17mΩ @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
G
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @TJ=125 C -Pulsed
ID IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C Derate above 25 C
PD
15 Operating and StorageTemperature Range TJ, TSTG
Limit
30
Ć 20
60
180 60 50 0.4 -65 to 175
Unit
V V
A A A W W/ C C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
RįJC RįJA
2.5 62.5
C /W C /W
15-2
CEP6031LS2/CEB6031LS2
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
...
