N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
CEP6030L/CEB6030L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
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