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SC8260 Dataheets PDF



Part Number SC8260
Manufacturers SamHop
Logo SamHop
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SC8260 DatasheetSC8260 Datasheet (PDF)

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8260 Ver 6.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.5 @ VGS=4.5V 10.8 @ VGS=4.0V 20V 8A 11.8 @ VGS=3.8V 13.5 @ VGS=3.1V 16.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 2.55 0.03 8260 Date Code Mark area 1-pin index mark S1 0..

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Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8260 Ver 6.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.5 @ VGS=4.5V 10.8 @ VGS=4.0V 20V 8A 11.8 @ VGS=3.8V 13.5 @ VGS=3.1V 16.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 2.55 0.03 8260 Date Code Mark area 1-pin index mark S1 0.16 0.01 S1 S2 G1 G2 S1 S2 0.65 0.65 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 0.65 0.65 φ 0.31 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 8 80 PT Total Power Dissipation a 1.3 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C FET1 Gate 1 FET2 Gate 2 Gate Protect Diode Source 1 Body Diode Source 2 Details are subject to change without notice. 1 Nov,03,2015 www.samhop.com.tw SC8260 Ver 6.0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVSSS Source-Source Breakdown Voltage ISSS Zero Gate Voltage Source Current IGSS Gate-Body Leakage Current VGS=0V , IS=250uA VSS=20V , VGS=0V VGS= ±8V , VSS=0V 20 V 1 uA ±1 uA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RSS(ON) Source-Source On-State Resistance gFS Forward Transconductance VSS=VGS , IS=1mA VGS=4.5V , IS=3A VGS=4.0V , IS=3A VGS=3.8V , IS=3A VGS=3.1V , IS=3A VGS=2.5V , IS=3A VSS=5V , IS=3A DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VSS=10V,VGS=0V f=1.0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VDD=20V IS=3A VGS=4.0V RGEN=6 ohm VDD=20V,IS=6A, VG1S1=4.0V 0.5 0.8 1.3 V 6.5 8.5 10.5 m ohm 7.0 8.7 10.8 m ohm 7.5 8.9 11.8 m ohm 8.0 9.7 13.5 m ohm 9.0 11.4 16.0 m ohm 14 S 561 pF 289 pF 102 pF 286 1000 3247 2525 17.4 ns ns ns ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VFSS Diode Forward Voltage VGS=0V,IS=1.5A Note a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.6mm. b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%. c.Guaranteed by design, not subject to production testing. 0.77 1.2 V Nov,03,2015 2 www.samhop.com.tw SC8260 Ver 6.0 VSSS / I SSS G2 S2 G1 VGS (off) G2 G1 S1 S2 10V 1mA S1 IGSS (+) / (--) S2 G2 G1 | yfs | G2 S1 S2 G1 S1 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. Nov,03,2015 3 www.samhop.com.tw SC8260 Ver 6.0 R SS (on) G2 S2 VF(S-S) 4.5V G2 S2 G1 S1 td(on), tr, t d(off), t f VIN V DD =10V IS =3A R L=3.33 W S2 VOUT PW=10 μs D.C. 1% G2 G1 S1 G1 Qg G2 S1 S2 G1 S1 * Note: Connect the mesurement terminal reversely if you want to mea.


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