Document
Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SC8260
Ver 6.0
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Max
10.5 @ VGS=4.5V
10.8 @ VGS=4.0V
20V 8A 11.8 @ VGS=3.8V
13.5 @ VGS=3.1V
16.0 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected.
WLCSP
TOP VIEW
1.61 0.03
BOTTOM VIEW
0.65
LAND PATTERN (REFERENCE)
0.65
2.55 0.03
8260
Date Code
Mark area
1-pin index mark S1 0.16 0.01
S1 S2 G1 G2 S1 S2
0.65 0.65
S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2
6 - φ 0.31
0.65 0.65
φ 0.31
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
20
VGSS IS ISP
Gate-Source Voltage Source Current-Continuous a
-Pulsed b
±12 8 80
PT Total Power Dissipation a
1.3
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
Units V V A A W
°C
FET1 Gate 1
FET2 Gate 2
Gate Protect Diode
Source 1
Body Diode
Source 2
Details are subject to change without notice.
1
Nov,03,2015
www.samhop.com.tw
SC8260
Ver 6.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS BVSSS Source-Source Breakdown Voltage ISSS Zero Gate Voltage Source Current IGSS Gate-Body Leakage Current
VGS=0V , IS=250uA VSS=20V , VGS=0V VGS= ±8V , VSS=0V
20 V 1 uA ±1 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RSS(ON) Source-Source On-State Resistance
gFS Forward Transconductance
VSS=VGS , IS=1mA VGS=4.5V , IS=3A VGS=4.0V , IS=3A VGS=3.8V , IS=3A VGS=3.1V , IS=3A VGS=2.5V , IS=3A VSS=5V , IS=3A
DYNAMIC CHARACTERISTICS c CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VSS=10V,VGS=0V f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
VDD=20V IS=3A VGS=4.0V RGEN=6 ohm
VDD=20V,IS=6A, VG1S1=4.0V
0.5 0.8 1.3
V
6.5 8.5 10.5 m ohm
7.0 8.7 10.8 m ohm
7.5 8.9 11.8 m ohm
8.0 9.7 13.5 m ohm
9.0 11.4 16.0 m ohm
14 S
561 pF 289 pF 102 pF
286 1000 3247 2525
17.4
ns ns ns ns
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VFSS
Diode Forward Voltage
VGS=0V,IS=1.5A
Note
a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.6mm. b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%. c.Guaranteed by design, not subject to production testing.
0.77 1.2
V
Nov,03,2015
2 www.samhop.com.tw
SC8260
Ver 6.0
VSSS / I SSS
G2
S2
G1
VGS (off)
G2 G1
S1 S2
10V 1mA S1
IGSS (+) / (--)
S2
G2
G1
| yfs |
G2
S1 S2
G1
S1
* Note: Connect the mesurement terminal reversely if you want to measure the FET2 side.
Nov,03,2015
3 www.samhop.com.tw
SC8260
Ver 6.0
R SS (on)
G2
S2
VF(S-S)
4.5V G2
S2
G1 S1
td(on), tr, t d(off), t f
VIN
V DD =10V
IS =3A R L=3.33 W
S2 VOUT
PW=10 μs D.C. 1%
G2 G1
S1
G1
Qg
G2
S1 S2
G1
S1
* Note: Connect the mesurement terminal reversely if you want to mea.