SC8230

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8230 Ver 4.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 19.0 @ VGS=4.5V 20.0 @ VGS=4.0V 20V 8A 21.0 @ VGS=3.1V 30.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.90 0.03 8230 Date Code 1.90 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 0.010 0.107 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 8 80 PT Total Power Dissipation a 1.6 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C FET1 Gate 1 FET2 Gate 2 Gate Protect Diode Source 1 Body Diode Source 2 Details are subject to change without notice. 1 Sep,04,2015 www.samhop.com.tw SC8230 Ver 4.0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVSSS Source-Source Breakdown Voltage ISSS Zero Gate Voltage Source Current IGSS Gate-Body Leakage Current VGS=0V , IS=250uA VSS=20V , VGS=0V VGS= ±8V , VSS=0V 20 V 1 uA ±1 uA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RSS(ON) Source-Source On-State Resistance gFS Forward Transconductance VSS=VGS , IS=250uA ...