N-Channel Enhancement Mode Field Effect Transistor
Description
CEM4412S1
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package.
D DDD
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)...
