CEF740A

CEP740A/CEB740A CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP740A CEB740A CEF740A VDSS 400V 400V 400V RDS(ON) 0.55Ω 0.55Ω 0.55Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a VDS VGS ID IDM e 400 ±30 10 7.4 40 10 d 7.4 d 40 d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 150 48 PD 1 0.55 Single Pulsed Avalanche Energy h EAS 250 Single Pulsed Avalanche Current h IAS 10 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Cas...