CEP6060R/CEB6060R
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Supe...
CEP6060R/CEB6060R
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 50 IDM 200
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
88 0.59
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS 168 IAS 58
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Units V V A A W
W/ C mJ A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2
62.5
Units C/W C/W
Specification and data are subject to change ...