N-Channel Enhancement Mode Field Effect Transistor
Description
CEP6060L/CEB6060L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
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