TIC246D

isc Triacs TIC246D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 400 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 16 A ITSM Non-repetitive peak on-state current 125 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~125 ℃ Rth(j-c) Thermal resistance, junction to case 1.9 ℃/W Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS TYP. MAX UNIT IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ IGT Gate trigger current Ⅰ Ⅱ Ⅲ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs 2.0 mA 12 50 19 50 16 50 mA Ⅳ 34 IH Holding current Vsupply = 12 V†,IG= 0 initial ITM=100mA 40 mA VGT Gate trigger voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs 2 V VTM On-state voltage IT= 22.5A; IG= 50mA 1.7 V isc website：www.iscsemi.cn 1 isc&iscsemi is registered trademark Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usag...