Document
INCHANGE Semiconductor
Ultrafast Recovery Rectifier
Product Specification
MUR3030PT
FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction
MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
APPLICATIONS ·Designed for use in switching power supplies, inverters and as
free wheeling diodes.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRW M
VR IF(AV)
IFM
IFSM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
Peak Repetitive Forward Current (Rated
VR, Square Wave,20kHz)
Per Diode Leg
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
300
15 30
30
150
V A A A
TJ Junction Temperature
-65~175 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
Ultrafast Recovery Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Product Specification
MUR3030PT
MAX 1.5
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF Maximum Instantaneous Forward Voltage IF= 15A
IR Maximum Instantaneous Reverse Current VRRM= 300V
trr Maximum Reverse Recovery Time
IF= 0.5A, IR= 1A, Irr= 0.25A
1.68 5 60
UNIT V
μA ns
isc website:www.iscsemi.cn
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