MUR1650CT

INCHANGE Semiconductor Ultrafast Recovery Rectifier Product Specification MUR1650CT FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds APPLICATIONS ·Designed for use in switching power supplies, inverters and as free wheeling diodes. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRW M VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Per Leg (Rated VR) Total Device 500 8 16 V A IFM Peak Repetitive Forward Current (Rated VR, Square Wave,20kHz) Per Diode Leg 16 Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions halfwave, single phase, 60Hz) 100 A A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor Ultrafast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Product Specification MUR1650CT MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 8A IR Maximum Instan...