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MUR850

Inchange Semiconductor

Ultrafast Recovery Rectifier

Ultrafast Recovery Rectifier MUR850 FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ ...


Inchange Semiconductor

MUR850

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Description
Ultrafast Recovery Rectifier MUR850 FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds APPLICATIONS ·Designed for use in switching power supplies, inverters and as free wheeling diodes. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) 500 V 8 A IFM Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) 16 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 100 A wave, single phase, 60Hz) TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Ultrafast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MUR850 MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 8A 1.68 IR Maximum Instant...




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