BUT21CF

INCHANGE Semiconductor isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- BUT21BF 450V(Min)- BUT21CF ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 BUT21BF BUT21CF 750 850 V VCEO Collector-Emitter Voltage BUT21BF BUT21CF 400 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 5A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 4 20 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case 6.46 ℃/W Thermal Resistance, Junction to Ambient 55 ℃/W isc Product Specification BUT21BF/CF isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUT21BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUT21BF BUT21CF IC= 0.1A ;IB= 0; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage BUT21BF IC= 3A; IB= 0.4A BUT21CF IC= 3A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage BUT21BF IC= 3A; IB= 0.4A BUT21CF IC= 3A; IB= 0.5A ICES Collector Cutof...