BUS131H

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUS131H DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 5A ICM Collector Current-Peak 10 A IB Base Current 4A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 8 125 200 -65~200 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUS131H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V VBE(sat) Base-Emitter Saturation Voltage ICEV Collector Cutoff Current IEBO Emitter Cutoff Current IC= 3A; IB= 0.3A VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ VEB= 6V; IC= 0 1.5 V 0.25 1.5 mA 1 mA hFE D...