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BUL58B

Silicon NPN Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL58B DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching APPLICATIONS ·Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ...

Inchange Semiconductor

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