BUL39D

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL39D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.0A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-peak tp<5ms IB Base Current-Continuous 8A 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 4 70 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 1.78 ℃/W Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL39D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat)-2 Base-Emitter Saturation Volt...