BUL118D

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL118D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 3A ICM Collector Current-peak tp<5ms IB Base Current-Continuous 6A 1.5 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 3 60 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 2.08 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL118D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2A; IB...