2SK3758
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3758
Switching Regulator Applications
u...
2SK3758
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type ( -MOS )
2SK3758
Switching
Regulator Applications
unit
Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) /Circuit
Maximum Ratings (Ta = 25°C)
1155..66mamx.ax
2.7
3.84 0.2
3.84 0.2
101.05.5mmaax x
44..77mmaxax 1.3
1.3
6.6.66 mmaxa.x
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
DC (Note 1) Pulse (t = 1 ms)
(Note 1) Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Symbol
VDSS VDGR VGSS
ID ID P
PD
EA S
IAR EAR Tc h Tstg
Rating
500 500 ±30
5 20
58
12
5 5.8 150 -55~150
Unit V V V
W mJ A mJ °C °C
131.3.44 mimin.n 3.9 max
3 . 9 max.
11..55mmaxax 0.81
0.81 max
00..4455
2.25.544 123
2.7
2.7
1. Gate 2. Drain(HEAT SINK) 3. Source
JEDEC
SC-46
JEITA
TO-220AB
Thermal Characteristics
TOSHIBA
Characteristics
Thermal resistance, channel to case Thermal resistance, channel to ambient
Symbol
Rth (ch-c) Rth (ch-a)
Max Unit
2.16 °C/W 83.3 °C/W
Weight : 2.0g(typ.)
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.82 mH, IAR = 5 A, RG = 25 Ω
1
Note 3: Repetitive rating: Pulse w...