MBR1045

Schottky Barrier Rectifier FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Plastic Material：UL Flammability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VR(RMS) RMS Reverse Voltag 45 V 31.5 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 125℃ 10 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ dv/dt Voltage Rate of Change (Rated VR) 1000 V/μs MBR1045 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MBR1045 MAX 2.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 10A ; TC= 25℃ IF= 10A ; TC= 125℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ Rated DC Voltage, TC= 125℃ MAX 0....