MMBR920L

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR920L DESCRIPTION ·Low Noise NF= 2.4dB TYP. @ f= 500MHz ·High Gain Gpe= 15dB TYP. @ f= 500MHz APPLICATIONS ·Designed for thick and thin-film circuits using surface mount components and requiring low-noise , high-gain signal amplification at frequencies to 1 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 25℃ TJ Junction Temperature Tstg Storage Temperature Range 3V 35 mA 0.35 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR920L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC= 0.1mA ; IE= 0 IE= 0.1mA ; IC= 0 20 2 V V ICBO Collector Cutoff Current VCB= 10V; IE= 0 50 nA hFE DC Current Gain COB Output Capacitance IC= 14mA ; VCE= 10V IE= 0 ; VCB= 10V; f= 1MHz 25 250 1.0 pF fT Current-Gain—Bandwidth Product IC= 14mA ; VCE= 10V; f= 0.5GHz 4.5 GHz NF Noise Figure NF Noise Figure IC= 2mA ; VCE= 10V; f= 0.5GHz 2.4 dB IC= 2mA ; VCE= 10V; f= 1GHz 3.0 dB Gpe Common-Emitter Amplifier...